GaNext
Research - Cambridge, England, United Kingdom
GaNext Details
Gallium Nitride "GaN" is a promising material to replace silicon in power electronics application in the 650V market sector. Power systems based on GaN are lighter, more compact, significantly more efficient and potentially cheaper than those based on Silicon. Within the GaNext project we aim to remove barriers for GaN adoption and demonstrate the higher efficiency and power density of GaN-based system in a range of applications. The heart of the project is the development of an intelligent GaN power module where the controller, drivers and protection circuits are co-packaged with the power devices.
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