Innoscience Technology Co., Ltd. was co-founded in December 2015 by scientists and experts from U.S., Korea and China. Innoscience is devoted to the R&D and manufacture of wide bandgap semiconductors. The first platform is located in Zhuhai National Hi-Tech District and has raised a fund of RMB 1.095 Billion. Innoscience has established China's first mass production line of 8 inches GaN on Si Power Device. The key products include 100V-650V GaN on Si power devices. The product design and performance have reached the world advanced level. Innoscience aims to build a world leading company in power devices in China and committed to devote to China's semiconductor industry.